PHOTOELECTRIC CONVERSION APPARATUS, IMAGING APPARATUS USING THE SAME, AND MANUFACTURING METHOD THEREOF

摘要

A photoelectric conversion apparatus includes: an active matrix-type TFT array substrate on which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, wherein the photoelectric conversion element connects with a drain electrode via a contact hole opened through a first interlayer insulation film provided above the thin film transistor, wherein a data line and a bias line are connected with the source electrode and the photoelectric conversion element via respective contact holes opened through the second interlayer insulation, and wherein at least a part of the photoelectric conversion element is fixed to have a shape different from a normal pixel between pixels adjacent to each other in an extending direction of the gate line, and an electrical connection between the photoelectric conversion element and the data line is cut off in the transistor of the pixel having the different shape.

主权项

1. A photoelectric conversion apparatus comprising:
an active matrix-type TFT array substrate on which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, wherein the thin film transistor includes: a plurality of gate lines having a gate electrode; a semiconductor layer provided to the gate electrode via a gate insulation film; and a source electrode and a drain electrode which are connected to the semiconductor layer, wherein the photoelectric conversion element connects with the drain electrode via a contact hole opened through a first interlayer insulation film provided above the thin film transistor, wherein a data line and a bias line are formed on a second interlayer insulation film provided above the photoelectric conversion element and are connected with the source electrode and the photoelectric conversion element via respective contact holes opened through the second interlayer insulation, and wherein at least a part of the photoelectric conversion element is fixed to have a shape different from a normal pixel between pixels adjacent to each other in an extending direction of the gate line, and an electrical connection between the photoelectric conversion element and the data line is cut off in the transistor of the pixel having the different shape.