摘要 |
Provided is a method for adjusting the threshold voltage of a multi-grid structure device, which is characterized by preparing a multi-grid structure device to form a channel impurity distribution of high doping on the surface and low doping in the interior; and using impurity doping to reduce the influence of coulomb impurity scattering on a carrier as far as possible while adjusting a threshold voltage, so as to enable that the carrier mobility is maintained at a higher level. Firstly, the solution can enable a multi-grid device to obtain a multi-threshold voltage with a larger range, and facilitate different demands of IC designers for the device in the process of circuit design. Secondly, in the process of introducing impurity doping to adjust a threshold voltage, the influence of coulomb impurity scattering on a channel carrier is reduced as far as possible to enable that the carrier mobility is maintained at a higher level and ensure that the device has a higher drive current. Finally, the solution can be achieved with a technological method compatible with the traditional CMOS, thereby having the potential of mass production. |