APPARATUS AND METHOD FOR GROWING SAPPHIER SINGLE CRYSTAL

摘要

The present invention relates to an apparatus for growing single crystal sapphire, comprising: a chamber; a refractory body disposed inside the chamber; a crucible disposed inside the refractory body in which single crystal seed and alumina material are inserted, and growing single crystal sapphire by heating and cooling the single crystal sapphire seed and alumina material; and a heat conductive metal layer disposed in the lower surface of the single crystal sapphire seed, and being in contact with the bottom surface of the crucible to allow heat exchange between the crucible and single crystal sapphire seed to be uniformly carried out over the whole area. According to the present invention, partial thermal unbalance of growth interface is eliminated and the formation of bubbles and shrinkage inside the single crystal sapphire can be prevented.