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发明名称
具反极性结构的无接面电晶体;A JUNCTIONLESS TRANSISTOR WITH A REVERSE POLARITY STRUCTURE
摘要
一种具反极性结构的无接面电晶体,包含有一基材、一半导体本体、一闸极以及一闸极绝缘层。该基材具有一第一极性;该半导体本体设置于该基材上,并包含一汲极端、一源极端以及一连接于该汲极端与该源极端之间的通道段;该闸极罩覆于该通道段远离该基材一侧;而该闸极绝缘层设置于该闸极与该通道段之间,其中,该半导体本体具有一与该第一极性相反的第二极性。据此,本发明藉由该半导体本体与该基材具有互为相反的该第一极性与该第二极性,不仅减少元件漏电流的产生,更可降低元件制造成本。
申请公布号
TW201438233
申请公布日期
2014.10.01
申请号
TW102111119
申请日期
2013.03.28
申请人
国立清华大学
发明人
吴永俊;韩铭鸿;陈弘斌
分类号
H01L29/78(2006.01);H01L29/40(2006.01)
主分类号
H01L29/78(2006.01)
代理机构
代理人
<name>黄志扬</name>
主权项
地址
新竹市光复路2段101号
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