Method to construct a 3D semiconductor device

摘要

A method to construct a semiconductor device, the method including: forming a first mono-crystallized semiconductor layer; forming a second mono-crystallized semiconductor layer including mono-crystallized semiconductor transistors; where the second mono-crystallized semiconductor layer overlays the first mono-crystallized semiconductor layer, where the first mono-crystallized semiconductor layer includes an alignment mark and the transistors are aligned to the alignment mark, and where the first mono-crystallized semiconductor layer includes logic circuits, and connecting the logic circuits to an external device using input/output (I/O) circuits, where the input/output (I/O) circuits are constructed on the second mono-crystallized semiconductor layer.

主权项

1. A method to construct a semiconductor device, the method comprising:
forming a first layer comprising mono-crystallized semiconductor and first logic circuits; forming a second layer comprising a mono-crystallized semiconductor layer, said second layer overlying said first logic circuits; forming transistors on said second layer;
wherein said forming transistors comprises a lithography step, said lithography step comprises an alignment to said first layer, and connecting said first logic circuits to an external device using input/output (I/O) circuits, said input/output (I/O) circuits are constructed on said second mono-crystallized semiconductor layer.