| 发明名称 | Semiconductor memory device and operating method thereof | ||
| 摘要 | A semiconductor memory device and a method of operating same includes reading a number of program/erase operations stored in a program/erase number storage unit, setting a pulse width of a program voltage based on the read number of program/erase operations, and performing a program operation on memory cells using the program voltage having the set pulse width. Setting of the pulse width of the program voltage includes decreasing the pulse width of the program voltage as the number of program/erase operations increases. | ||
| 申请公布号 | US8848448(B2) | 申请公布日期 | 2014.09.30 |
| 申请号 | US201213715164 | 申请日期 | 2012.12.14 |
| 申请人 | SK Hynix Inc. | 发明人 | Leem Jong Soon |
| 分类号 | G11C16/10;G11C16/12;G11C16/02;G11C16/06;G11C16/04 | 主分类号 | G11C16/10 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method of operating a semiconductor memory device, the method comprising: reading a number of program/erase operations stored in a program/erase number storage unit; setting a pulse width of a program voltage based on the read number of program/erase operations; performing a program operation on memory cells using the program voltage having the set pulse width; updating the number of program/erase operations; and storing the updated number of program/erase operations in the program/erase number storage unit; wherein setting the pulse width of the program voltage includes decreasing the pulse width of the program voltage as the number of program/erase operations increases. | ||
| 地址 | Icheon-Si KR | ||