Methods of forming multiple N-type semiconductor devices with different threshold voltages on a semiconductor substrate

摘要

One illustrative method disclosed herein involves forming an integrated circuit product comprised of first and second N-type transistors formed in and above first and second active regions, respectively. The method generally involves performing a common threshold voltage adjusting ion implantation process on the first and second active regions, forming the first and second transistors, performing an amorphization ion implantation process to selectively form regions of amorphous material in the first active region but not in the second active region, after performing the amorphization ion implantation process, forming a capping material layer above the first and second transistors and performing a re-crystallization anneal process to convert at least portions of the regions of amorphous material to a crystalline material. In some cases, the capping material layer may be formed of a material having a Young's modulus of at least 180 GPa.

主权项

1. A method of forming an integrated circuit product comprised of first and second N-type transistors, wherein said first and second transistors are formed in and above first and second active regions, respectively, comprising:
performing a common threshold voltage adjusting ion implantation process on said first and second active regions; forming said first and second N-type transistors in and above said first and second active regions; forming a masking layer that masks said second transistor but leaves said first transistor exposed for further processing; performing an amorphization ion implantation process through said masking layer on said exposed first transistor so as to form regions of amorphous material in said first active region; removing said masking layer; forming a capping material layer above said first and second transistors and above said first and second active regions, said capping material layer comprising a material having a Young's modulus of at least 180 GPa; and after forming said material layer, performing a re-crystallization anneal process to convert at least portions of said regions of amorphous material to a crystalline material.