Nonvolatile memory device and method for manufacturing the same

摘要

According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The method can include forming a second stacked body, removing the second stacked body formed in a region where a first memory unit will be formed, forming a first stacked body, and removing the first stacked body formed in a region where a second memory unit will be formed. The method can include simultaneously processing the first stacked body formed in a region where the first memory unit will be formed and the second stacked body formed in a region where the second memory unit will be formed to form a memory cell of the first memory unit from the first stacked body and form a memory cell of the second memory unit from the second stacked body.

主权项

1. A nonvolatile memory device, comprising:
a first memory unit; and a second memory unit having a data erase temperature higher than a data erase temperature of the first memory unit, the first memory unit being a spin injection MRAM, wherein the first memory unit includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer placed between the first magnetic layer and the second magnetic layer, and the first magnetic layer and the second magnetic layer are a stacked layer of a layer using TbCoFe and a layer using CoFeB.