Reverse recovery using oxygen-vacancy defects

摘要

A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.

主权项

1. A manufacturing method of a semiconductor device comprising a semiconductor substrate including a first region and a second region,
wherein a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects in the first region, and the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects in the second region, the method comprising: introducing oxygen into the semiconductor substrate; and irradiating charged particles to a predetermined depth in the semiconductor substrate, and wherein said introducing oxygen into the semiconductor substrate further comprising:
forming an oxide film on one of main surfaces of the semiconductor substrate;and annealing the semiconductor substrate in a state that the oxide film is present.