Method extending the service interval of a gas distribution plate

摘要

Methods for reducing the contamination of a gas distribution plate are provided. In one embodiment, a method for processing a substrate includes transferring the substrate into a chamber, performing a treating process on the substrate, and providing a purge gas into the chamber before or after the treating process to pump out a residue gas relative to the treating process from the chamber. The treating process includes distributing a reactant gas into the chamber through a gas distribution plate.

主权项

1. A method for processing a substrate, comprising:
performing an etch process on a substrate in a first chamber wherein the etch process comprises exposing one or more layers of a film stack to etchants comprising at least one halogen-containing gas; after performing the etch process, transferring the substrate into a second chamber; performing a treating process on the substrate in the second chamber, wherein the treating process comprises distributing a processing gas into the second chamber through a gas distribution plate and removing halogen-containing etch residues from the substrate; transferring the substrate out of the second chamber; and providing a purge gas into the second chamber during at least one of transferring the substrate into or out of the second chamber, wherein providing the purge gas comprises providing the purge gas through the gas distribution plate.