发明名称 Method and apparatus for a conductive bump structure
摘要 A method and apparatus for a conductive bump structure is provided. The conductive bump structure may include a conductive layer and a conductive bump formed over a through via (“TV”). The TV may be formed through a substrate and a passivation layer. The TV may have a top surface extending above a top surface of the passivation layer. The conductive layer may be formed directly over the TV using one or more electroless plating processes. The conductive layer may have sides that may taper from a top surface of the conductive layer to the top surface of the passivation layer. The conductive layer may include a plurality of layers, wherein each layer may be formed using one or more electroless plating processes. The conductive bump may be formed on the conductive layer and may be reflowed to couple the conductive bump to the conductive layer.
申请公布号 US8847389(B1) 申请公布日期 2014.09.30
申请号 US201313889053 申请日期 2013.05.07
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chang Jung-Hua;Huang Cheng-Lin;Lin Jing-Cheng
分类号 H01L23/498;H01L23/00 主分类号 H01L23/498
代理机构 Slater and Matsil, L.L.P. 代理人 Slater and Matsil, L.L.P.
主权项 1. An apparatus comprising: a substrate; a passivation layer formed over the substrate; a first through via (TV) formed through the substrate and the passivation layer, wherein a first surface of the first TV extends above a first surface of the passivation layer; a conductive layer formed directly over the first TV and the passivation layer, the conductive layer having a non-planar surface and sides that taper from a first surface of the conductive layer to the first surface of the passivation layer; and a conductive bump formed directly over the conductive layer.
地址 Hsin-Chu TW