| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces an influence of parasitic resistance of a gate electrode even when a TEG has a large area to enable measurement of characteristics of a gate insulation film with high accuracy; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises a TEG 100 for evaluation of a MOS formed on a silicon substrate 1. The TEG 100 includes: a gate insulation film 5 formed on the silicon substrate 1; a gate electrode 11 formed on the gate insulation film 5; board connection terminals 31, 32 electrically connected to positions of the silicon substrate 1, respectively, which are different from each other; and gate connection terminals 41, 42 electrically connected to positions of the gate electrode 11, respectively, which are different from each other. |
