FERROELECTRIC THIN FILM-FORMING SOL-GEL SOLUTION

摘要

A sol-gel solution for forming a ferroelectric thin film includes: a PZT-based compound; a polymer compound to adjust the viscosity and including polyvinyl pyrrolidone; and an organic dopant including N-methyl pyrrolidone, wherein, the amount of the PZT-based compound is greater than or equal to 17 mass % in terms of oxides, the molar ratio (PZT-based compound: polyvinyl pyrrolidone) of the PZT-based compound to the polyvinyl pyrrolidone is 1:0.1 to 1:0.5 in terms of monomers, and the amount of the organic dopant including N-methyl pyrrolidone in the sol-gel solution is 3 mass % to 13 mass %.