发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR MOUNTING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a connection method of inhibiting an unconnected state between an electrode of a semiconductor substrate and a substrate electrode for mounting the semiconductor substrate.SOLUTION: A semiconductor device manufacturing method comprises: a first process of mounting on a first substrate on which a plurality of distribution lines and a plurality of first electrodes connected to the plurality of distribution lines are formed, respectively, a second substrate on which a plurality of through holes corresponding to the plurality of first electrodes and a plurality of relay members each formed by a solder and protrudes on both sides of one through hole are provided in a manner such that the plurality of first electrodes and the plurality of through holes overlap each other in planar view; a second process of melting the plurality of relay members to connect the plurality of relay members with the plurality of first electrodes after the first process; and a third process of arranging a semiconductor substrate on which a plurality of second electrodes corresponding to the plurality of first electrodes are formed on the side opposite to the first substrate across the second substrate to connect the plurality of first electrodes with the plurality of second electrodes via the plurality of relay members after the second process.
申请公布号 JP2014183057(A) 申请公布日期 2014.09.29
申请号 JP20130054525 申请日期 2013.03.18
申请人 FUJITSU LTD 发明人 KURASHINA MAMORU;MIZUTANI DAISUKE
分类号 H01L23/32;H01L21/60;H01L23/12 主分类号 H01L23/32
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