发明名称 |
SILICON CARBIDE CHIP, SILICON CARBIDE WAFER, TEST METHOD FOR SILICON CARBIDE CHIP, AND TEST METHOD FOR SILICON CARBIDE WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide chip, a silicon carbide wafer, a test method for a silicon carbide chip, and a test method for a silicon carbide wafer, to which a current conduction test can be applied even when a chip has a large area.SOLUTION: A silicon carbide chip 4 includes a product chip region 1 in which a silicon carbide semiconductor element performing an actual action is crated, and a PN diode 3 which is disposed around the product chip region 1 and which is not involved in an actual action of a smaller area than the product chip region 1. |
申请公布号 |
JP2014183136(A) |
申请公布日期 |
2014.09.29 |
申请号 |
JP20130055828 |
申请日期 |
2013.03.19 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
YAMAMOTO SHIGEHISA;KONISHI KAZUYA |
分类号 |
H01L29/868;H01L21/336;H01L21/66;H01L27/04;H01L29/78;H01L29/861 |
主分类号 |
H01L29/868 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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