NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve operation performance.SOLUTION: A nonvolatile semiconductor storage device of an embodiment comprises: a ground layer; a laminate formed on the ground layer and having plural electrode layers and plural insulation layers alternately stacked; a first interlayer insulation film formed on the laminate; a gate electrode layer formed on the first interlayer insulation film; a second interlayer insulation film formed on the gate electrode; a semiconductor layer elongated from a top end of the second interlayer insulation film to a bottom end of the laminate; first insulation films each provided between the semiconductor layer and each of the electrode layers; and a second insulation film provided between the semiconductor layer and the gate electrode. The thickness of the semiconductor layer, which is formed above a top end of the gate electrode, is larger than that of the semiconductor layer, which is formed below the top end of the gate electrode.