发明名称 Co-Cr-Pt-BASED SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
摘要 <p>A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering.</p>
申请公布号 SG11201403857T(A) 申请公布日期 2014.09.26
申请号 SGT11201403857 申请日期 2012.12.12
申请人 JX NIPPON MINING & METALS CORPORATION 发明人 SATO ATSUSHI;IKEDA YUKI;ARAKAWA ATSUTOSHI;TAKAMI HIDEO;NAKAMURA YUICHIRO
分类号 G11B5/851;B22F1/00;B22F9/04;C22C1/05;C22C19/07;C22C32/00;C23C14/34 主分类号 G11B5/851
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