HETEROGENEOUS LAYERED STRUCTURE, METHOD FOR PREPARING THE HETEROGENEOUS LAYERED STRUCTURE, AND ELECTRIC DEVICE INCLUDING THE HETEROGENEOUS LAYERED STRUCTURE

摘要

Disclosed is a heterogeneous layered structure of a hexagonal boron nitride sheet (h-BN) and a graphene sheet, an electric device using the same, and a fabricating method thereof. The heterogeneous layered structure has a high quality interface state having few impurities between the h-BN sheet and the graphene sheet, by successively forming the graphene sheet with a vapor deposition method after a large-area h-BN sheet is grown on a metal substrate with a vapor deposition method. The heterogeneous layered structure of the h-BN and the graphene which has a high quality interface condition and a large area can be used for various electronic devices including a FET.