SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

According to one embodiment, a semiconductor light emitting device includes a semiconductor film, an electrode, a passivation film, a sealing resin body, and an intermediate film. The semiconductor film contains a Group III nitride semiconductor. The electrode is connected to a first surface of the semiconductor film. The passivation film covers an end surface of the semiconductor film and the first surface. The sealing resin body covers the first surface and a side surface of the electrode to leave a second surface of the semiconductor film exposed. The intermediate film is provided between the passivation film and the sealing resin body. The absolute value of the difference between an internal stress of the intermediate film and that of the sealing resin body is less than the absolute value of the difference between an internal stress of the passivation film and that of the sealing resin body.

主权项

1. A semiconductor light emitting device, comprising:
a semiconductor film containing a Group III nitride semiconductor; an electrode connected to a first surface of the semiconductor film; a passivation film covering an end surface of the semiconductor film and a region of the first surface other than a region contacting the electrode; a sealing resin body covering the first surface of the semiconductor film and a side surface of the electrode to leave a second surface of the semiconductor film exposed; and an intermediate film provided between the passivation film and the sealing resin body, the absolute value of the difference between an internal stress of the intermediate film and an internal stress of the sealing resin body being less than the absolute value of the difference between an internal stress of the passivation film and the internal stress of the sealing resin body.