| 摘要 |
PROBLEM TO BE SOLVED: To avoid a micro scratch problem.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming on a principal surface of a semiconductor substrate, a first pattern having a first wafer edge cut width; a process of forming an interlayer insulation film on the first pattern; a process of coating a negative resist on the interlayer insulation film; a process of performing first exposure on the negative resist by using a peripheral exposure device; a process of performing second exposure on the negative resist; a process of performing a development process on the negative resist to form a second pattern which is a blank pattern provided in a region occupying a second wafer edge cut width larger than the first wafer wedge cut width and covers a part of the first pattern, and a third pattern having the second wafer edge cut width; and a process of removing a part of the interlayer insulation film located on the first pattern by using the second pattern and the third pattern as masks. |
