发明名称 VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
摘要 A vapor phase growth apparatus of an embodiment includes a reaction chamber, a first gas supply channel that supplies a Si source gas to the reaction chamber, a second gas supply channel that supplies a C source gas to the reaction chamber, a third gas supply channel that supplies an n-type impurity source gas to the reaction chamber, a fourth gas supply channel that supplies a p-type impurity source gas to the reaction chamber, and a control unit that controls the amounts of the n-type impurity and p-type impurity source gases at a predetermined ratio, and introduces the n-type impurity and p-type impurity source gases into the reaction chamber. Where the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form a combination of Al, Ga, or In and N, and/or a combination of B and P.
申请公布号 US2014283736(A1) 申请公布日期 2014.09.25
申请号 US201414206241 申请日期 2014.03.12
申请人 Kabushiki Kaisha Toshiba 发明人 Nishio Johji;Shimizu Tatsuo;Ota Chiharu;Shinohe Takashi
分类号 C30B25/14;H01L21/02;C23C16/22 主分类号 C30B25/14
代理机构 代理人
主权项 1. A vapor phase growth apparatus comprising: a reaction chamber; a first gas supply channel supplying an Si (silicon) source gas to the reaction chamber; a second gas supply channel supplying a C (carbon) source gas to the reaction chamber; a third gas supply channel supplying an n-type impurity source gas to the reaction chamber; a fourth gas supply channel supplying a p-type impurity source gas to the reaction chamber; and a control unit controlling amounts of the n-type impurity source gas and the p-type impurity source gas at a predetermined ratio, and introduce the n-type impurity source gas and the p-type impurity source gas into the reaction chamber, wherein, when the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form at least a first combination or a second combination, the first combination being a combination of the element A selected from a group consisting of Al (aluminum), Ga (gallium), and In (indium) and the element D being N (nitrogen), the second combination being a combination of the element A being B (boron) and the element D being P (phosphorus).
地址 Minato-ku JP