ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

An electronic device comprising a semiconductor memory unit that includes a resistance variable element formed over a substrate, and including stacked therein a bottom electrode, a variable resistance layer and a top electrode, and a barrier layer formed over the resistance variable element, and including an amorphous silicon layer which is doped with at least one kind of impurity.

主权项

1. A method for fabricating an electronic device, comprising:
forming a target processing layer; forming a barrier layer over the target processing layer to include an amorphous silicon layer which is doped with one or more impurities; patterning the barrier layer; and etching the target processing layer using the patterned barrier layer.