发明名称 TEMPERATURE CONTROL METHOD, CONTROL APPARATUS, AND PLASMA PROCESSING APPARATUS
摘要 A temperature control method is provided for controlling a plasma processing apparatus that is capable of changing a temperature setting for each step of a plasma process including multiple steps. The method includes a transfer step of performing an entry process for transferring a workpiece into a processing chamber of the plasma processing apparatus and/or an exit process for transferring the workpiece out of the processing chamber, a process execution step of executing the plasma process including multiple steps, and a temperature control step of performing a first temperature control and/or a second temperature control. The first temperature control includes controlling a temperature to a temperature setting of a next process according to a time execution of the plasma process is completed, and the second temperature control includes controlling the temperature to the temperature setting of the next process in parallel with the entry process and/or the exit process.
申请公布号 US2014288726(A1) 申请公布日期 2014.09.25
申请号 US201214354649 申请日期 2012.10.30
申请人 Tokyo Electron Limited 发明人 Miura Tatsuya;Ozawa Wataru;Fukasawa Kimihiro;Kazama Kazunori
分类号 G05D23/19 主分类号 G05D23/19
代理机构 代理人
主权项 1. A temperature control method for controlling a plasma processing apparatus that performs a plasma process including a plurality of steps on a workpiece and is capable of changing a temperature setting for each step of the plasma process, the temperature control method comprising: a transfer step of performing at least one of an entry process for transferring the workpiece into a processing chamber of the plasma processing apparatus and an exit process for transferring the workpiece out of the processing chamber; a process execution step of executing the plasma process including the plurality of steps; and a temperature control step of performing at least one of a first temperature control and a second temperature control, the first temperature control including controlling a temperature to a temperature setting of a next process according to a time the execution of the plasma process is completed, and the second temperature control including controlling the temperature to the temperature setting of the next process in parallel with at least one of the entry process and the exit process.
地址 Tokyo JP