SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate manufacturing method which can reduce cracks in semiconductor substrates obtained by cutting and reduce the occurrence of breakage due to increase in inner stress of a semiconductor block at the time of cutting even when a conventional plate material and sliced base which have a thermal expansion coefficient drastically different from that of the semiconductor block are used.SOLUTION: In a semiconductor device manufacturing method, sequentially performed are: a first bonding process of bonding a plate material 3 and a sliced base 2 via a first adhesive layer composed of a curable adhesive; a second bonding process of bonding the sliced base 2 and a first principal surface 1a side of a block 1 via a second adhesive layer which is composed of a curable adhesive and which is in a state where curing does not progress to a degree less than a cured state of the first adhesive layer; and a cutting process of cutting from a second principal surface 1b side of the block 1 on the opposite side to the first principal surface 1a toward the first principal surface 1a side.