发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To effectively inhibit breaking of an input circuit by an ESD surge voltage directly applied to the input circuit via an output circuit in a semiconductor device including the output circuit and the input circuit which are supplied with power supply voltages from power systems different from each other.SOLUTION: A semiconductor device comprises a first power supply pad 11, a first ground pad 12, a first power supply line 13, a first ground line 14, an output circuit 15, a second power supply pad 21, a second ground pad 22, a second power supply line 23, a second ground line 24, an input circuit 25, a signal line 20, a main ESD protection element 16, a protection diode pair D1 and a PMOS transistor P2. The output circuit 15 includes a PMOS transistor P3 and the input circuit 25 includes an NMOS transistor N1. The PMOS transistor P2 includes a source connected to the signal line 20, a drain connected to the second ground line 24, and a gate and a back gate which are connected to the second power supply line 23.
申请公布号 JP2014179662(A) 申请公布日期 2014.09.25
申请号 JP20140138696 申请日期 2014.07.04
申请人 RENESAS ELECTRONICS CORP 发明人 OKUJIMA MOTOTSUGU
分类号 H01L27/04;H01L21/822;H01L27/06 主分类号 H01L27/04
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