SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR WAFER HOLDER

摘要

A semiconductor manufacturing apparatus includes a chamber, a reaction-gas inlet, a gas exhaust port, a rotation unit, a semiconductor wafer holder, a heater, and a purge-gas inlet. The wafer holder includes a first hold region to hold the semiconductor wafer and a second hold region held by the rotation unit. The second hold region surrounds the first hold region. The level of the first hold region and the level of the second hold region differ. A plurality of ventholes is provided to the first hold region so that the ventholes are just below a sidewall of the semiconductor wafer held by the first hold region.

主权项

1. A semiconductor manufacturing apparatus, the apparatus comprising:
a chamber; a reaction-gas inlet provided to the chamber, the inlet introducing a reaction gas into the chamber; a gas exhaust port provided to the chamber, the port exhausting the reaction gas; a rotation unit provided to the chamber; a semiconductor wafer holder provided above the rotation unit, the holder holding a semiconductor wafer; a heater provided inside the rotation unit; and a purge-gas inlet to introduce a purge gas into a space, the space enclosed by the rotation unit, the semiconductor wafer holder and the semiconductor wafer,the wafer holder including:
a first hold region to hold the semiconductor wafer, the first hold region having a plurality of ventholes provided to the first hold region so that the ventholes are just below a sidewall of the semiconductor wafer held by the first hold region; and a second hold region held by the rotation unit, the second hold region surrounding the first hold region and having a protrusion provided above each of the ventholes such that the protrusion protrudes from the inside surface toward the first hold region to face the sidewall, wherein a difference between levels of the first and second hold regions structurally include a first upper surface of the first hold region, a second upper surface of the second hold region, and an inside surface of the second hold region, the inside surface near the first and second upper surfaces.