发明名称 |
METHOD OF MANUFACTURING A MONOLAYER GRAPHENE PHOTODETECTOR AND MONOLAYER GRAPHENE PHOTODETECTOR |
摘要 |
In various embodiments of the present disclosure, there is provided a method of manufacturing a monolayer graphene photodetector, the method including forming a graphene quantum dot array in a graphene monolayer, and forming an electron trapping center in the graphene quantum dot array. Accordingly, a monolayer graphene photodetector is also provided. |
申请公布号 |
WO2014149004(A1) |
申请公布日期 |
2014.09.25 |
申请号 |
WO2014SG00138 |
申请日期 |
2014.03.20 |
申请人 |
NANYANG TECHNOLOGICAL UNIVERSITY |
发明人 |
ZHANG, YONGZHE;WANG, QIJIE |
分类号 |
H01L31/0256;B82Y40/00;B82Y99/00;H01L31/18 |
主分类号 |
H01L31/0256 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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