发明名称 METHOD OF MANUFACTURING A MONOLAYER GRAPHENE PHOTODETECTOR AND MONOLAYER GRAPHENE PHOTODETECTOR
摘要 In various embodiments of the present disclosure, there is provided a method of manufacturing a monolayer graphene photodetector, the method including forming a graphene quantum dot array in a graphene monolayer, and forming an electron trapping center in the graphene quantum dot array. Accordingly, a monolayer graphene photodetector is also provided.
申请公布号 WO2014149004(A1) 申请公布日期 2014.09.25
申请号 WO2014SG00138 申请日期 2014.03.20
申请人 NANYANG TECHNOLOGICAL UNIVERSITY 发明人 ZHANG, YONGZHE;WANG, QIJIE
分类号 H01L31/0256;B82Y40/00;B82Y99/00;H01L31/18 主分类号 H01L31/0256
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