发明名称 |
RF SYSTEM-IN-PACKAGE WITH MICROSTRIP-TO-WAVEGUIDE TRANSITION |
摘要 |
An apparatus includes an IC package comprising a substrate having a first metal layer, a second metal layer, and a dielectric layer disposed between the first and second metal layers. The IC package further comprises an IC die disposed at a surface of the substrate and comprising RF circuitry. The first metal layer comprises a microstrip feedline extending from a pin of the IC die. The microstrip feedline includes a conductive trace having a probe element at a tip distal from the pin. The first metal layer further comprises a waveguide opening comprising a region surrounding the probe element, the region being substantially devoid of conductive material. The substrate further comprises a plurality of metal vias disposed at the perimeter of the region, the metal vias extending from the first metal layer to the second metal layer. |
申请公布号 |
US2014285389(A1) |
申请公布日期 |
2014.09.25 |
申请号 |
US201313870457 |
申请日期 |
2013.04.25 |
申请人 |
Fakharzadeh Mohammad;Tazlauanu Mihai |
发明人 |
Fakharzadeh Mohammad;Tazlauanu Mihai |
分类号 |
H01Q21/00;H01P11/00;H01P5/08 |
主分类号 |
H01Q21/00 |
代理机构 |
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代理人 |
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主权项 |
1. An apparatus comprising:
an integrated circuit (IC) package comprising:
a substrate comprising a first metal layer, a second metal layer, and a dielectric layer disposed between the first and second metal layers;an IC die disposed at a surface of the substrate, the IC die comprising radio frequency (RF) circuitry;the first metal layer comprising:
a first microstrip feedline extending from a first pin of the IC die, the first microstrip feedline comprising a first conductive trace having a first probe element at a tip distal from the first pin; anda first waveguide opening comprising a first region surrounding the first probe element, the first region being substantially devoid of conductive material; andthe substrate further comprising a first plurality of metal vias disposed at the perimeter of the first region and extending from the first metal layer to the second metal layer. |
地址 |
Toronto CA |