MICROELECTRONIC DEVICES WITH THROUGH-SILICON VIAS AND ASSOCIATED METHODS OF MANUFACTURING

摘要

Microelectronic devices with through-silicon vias and associated methods of manufacturing such devices. One embodiment of a method for forming tungsten through-silicon vias comprising forming an opening having a sidewall such that the opening extends through at least a portion of a substrate on which microelectronic structures have been formed. The method can further include lining the sidewall with a dielectric material, depositing tungsten on the dielectric material such that a cavity extends through at least a portion of the tungsten, and filling the cavity with a polysilicon material.

主权项

1. A method for forming tungsten through-silicon vias, comprising:
forming an opening having a sidewall extending through at least a portion of a substrate on which electrical components have been formed; forming a dielectric liner along the sidewall of the opening; forming a tungsten conductor along the dielectric liner, wherein the tungsten conductor partially fills the opening such that a cavity extends into the tungsten conductor; and depositing polysilicon into the cavity in the tungsten conductor.