NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device and a method of manufacturing the same, capable of resolving a problem caused by reduction in coupling ratio.SOLUTION: A nonvolatile semiconductor memory device comprises: a memory cell region having a memory cell that has a floating electrode on a gate insulating film and in which a control electrode is laminated on the floating electrode via an inter-electrode insulating film; and a peripheral circuit region having a peripheral element and in which a first polysilicon and a first insulating film are laminated. The floating electrode of the memory cell is configured to contain polysilicon having a P-type impurity. A first introduction layer of carbon (C) or nitrogen (N) is formed in a first upper region where the polysilicon having the P-type impurity is contacted with the inter-electrode insulating film. Carbon (C) or nitrogen (N) is not introduced to at least a part of a region lower than the first introduction layer. With respect to the first polysilicon, a second introduction layer of carbon (C) or nitrogen (N) is formed in a second upper region contacted with the first insulating film. A width of the first introduction layer and that of the second introduction layer are the same as each other in a lamination direction.