METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING A METALLISATION LAYER

摘要

A method for manufacturing semiconductor devices is disclosed. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substrate has a device thickness. At least one metallisation layer is formed on the second surface of the semiconductor substrate. The metallisation layer has a thickness which is greater than the device thickness.

主权项

1. A semiconductor device, comprising:
a semiconductor chip comprising a first surface and a second surface opposite to the first surface, the semiconductor chip comprising a thickness; and at least one metallisation portion on the second surface of the semiconductor chip, the metallisation portion comprising a thickness greater than the thickness of the semiconductor chip.