发明名称 |
AN ARRAY OF SPLIT GATE NON-VOLATILE FLOATING GATE MEMORY CELLS HAVING IMPROVED STRAPPING OF THE COUPLING GATES |
摘要 |
<p>An array of non-volatile memory cells with spaced apart first regions extending in a row direction and second regions extending in a column direction, with a channel region defined between each second region and its associated first region. A plurality of spaced apart word line gates each extending in the row direction and positioned over a first portion of a channel region. A plurality of spaced apart floating gates are positioned over second portions of the channel regions. A plurality of spaced apart coupling gates each extending in the row direction and over the floating gates. A plurality of spaced apart metal strapping lines each extending in the row direction and overlying a coupling gate. A plurality of spaced apart erase gates each extending in the row direction and positioned over a first region and adjacent to a floating gate and coupling gate.</p> |
申请公布号 |
EP2780943(A2) |
申请公布日期 |
2014.09.24 |
申请号 |
EP20120848803 |
申请日期 |
2012.10.22 |
申请人 |
SILICON STORAGE TECHNOLOGY INC. |
发明人 |
GHAZAVI, PARVIZ;TRAN, HIEU VAN;WANG, SHIUH-LUEN;DO, NHAN;OM'MANI, HENRY A. |
分类号 |
H01L27/088;H01L21/28;H01L27/02;H01L27/115;H01L29/423;H01L29/66;H01L29/788 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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