发明名称 AN ARRAY OF SPLIT GATE NON-VOLATILE FLOATING GATE MEMORY CELLS HAVING IMPROVED STRAPPING OF THE COUPLING GATES
摘要 <p>An array of non-volatile memory cells with spaced apart first regions extending in a row direction and second regions extending in a column direction, with a channel region defined between each second region and its associated first region. A plurality of spaced apart word line gates each extending in the row direction and positioned over a first portion of a channel region. A plurality of spaced apart floating gates are positioned over second portions of the channel regions. A plurality of spaced apart coupling gates each extending in the row direction and over the floating gates. A plurality of spaced apart metal strapping lines each extending in the row direction and overlying a coupling gate. A plurality of spaced apart erase gates each extending in the row direction and positioned over a first region and adjacent to a floating gate and coupling gate.</p>
申请公布号 EP2780943(A2) 申请公布日期 2014.09.24
申请号 EP20120848803 申请日期 2012.10.22
申请人 SILICON STORAGE TECHNOLOGY INC. 发明人 GHAZAVI, PARVIZ;TRAN, HIEU VAN;WANG, SHIUH-LUEN;DO, NHAN;OM'MANI, HENRY A.
分类号 H01L27/088;H01L21/28;H01L27/02;H01L27/115;H01L29/423;H01L29/66;H01L29/788 主分类号 H01L27/088
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