| 摘要 |
The present invention relates to an etching apparatus of processing a wafer with plasma. A wavelength used for the analysis of an etching process is specified, among multiple wavelengths comprising the luminescence data of plasma. The etching apparatus of the present invention includes calculating the luminescence intensity near the wavelengths, during etching process, in which a specified element emits light, from information which represents luminescence measured by a spectroscope, and extracting a wavelength corresponding to the calculated luminescence intensity in relation to a corresponding element, when information about the luminescence intensity memorized in a memory part is similar to information about the calculated luminescence intensity. |
