| 摘要 |
<p>A semiconductor light emitting device comprises a laminate, a first metal layer, and a second metal layer. The laminate includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The second semiconductor layer is spaced apart from the first semiconductor layer in a first direction. The light emitting layer is provided between the second semiconductor layer and the first semiconductor layer. The first metal layer is laminated with the laminate in the first direction and electrically connected to the selected one among the second semiconductor layer and the first semiconductor layer. The first metal layer has a side surface which is extended in the first direction. The second metal layer covers at least a portion of the side surface of the first metal layer. The reflectance of the second metal layer is higher than the reflectance of the first metal layer.</p> |
