发明名称 |
MEMORY CELLS, INTEGRATED DEVICES, AND METHODS OF FORMING MEMORY CELLS |
摘要 |
Some embodiments include integrated devices, such as memory cells. The devices may include chalcogenide material, an electrically conductive material over the chalcogenide material, and a thermal sink between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material. Some embodiments include a method of forming a memory cell. Chalcogenide material may be formed over heater material. Electrically conductive material may be formed over the chalcogenide material. A thermal sink may be formed between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material. |
申请公布号 |
EP2780944(A1) |
申请公布日期 |
2014.09.24 |
申请号 |
EP20120850697 |
申请日期 |
2012.11.07 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
REDAELLI, ANDREA;PIROVANO, AGOSTINO;RUSSO, UGO;LAVIZZARI, SIMONE |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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