| 摘要 |
One embodiment of the sputtering target having a component composition containing Sn in the amount of 0.1-1.5 mass%, with the remainder comprising Ag and inevitable impurities, wherein the average particle diameter of the alloy crystal grains is 30mum or more and less than 120mum, and the variation in the particle diameter of the crystal grains is 20% or less of the average particle diameter. One embodiment of the method for producing the sputtering target in which a melt-cast ingot having the component composition is subjected to a hot-rolling step, a cooling step, and a machining step, in this order, wherein: the hot-rolling step involves one or more passes of finish hot rolling under conditions in which the rolling reduction for each pass is 20-50%, the strain rate is 3-15/sec, and the temperature after the pass is 400-650°C; and the cooling step involves quickly cooling at a cooling rate of 200-1000°C/min. |
