发明名称 |
Thin film transistor array panel and manufacturing method thereof |
摘要 |
A thin film transistor array panel includes: a gate line and a storage electrode on a substrate and separated from each other; a gate insulating layer covering the gate line and the storage electrode; a data line crossing the gate line and being on the gate insulating layer; a thin film transistor formed at a crossing region of the gate line and the data line, and including a gate electrode, a source electrode, and a drain electrode; a passivation layer exposing a portion of the drain electrode and formed on the thin film transistor and the data line; and a pixel electrode contacting the drain electrode and overlapping the storage electrode with the gate insulating layer interposed therebetween. |
申请公布号 |
US8841677(B2) |
申请公布日期 |
2014.09.23 |
申请号 |
US201113040245 |
申请日期 |
2011.03.03 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Jung Sun-Kyo |
分类号 |
H01L27/14;H01L27/12 |
主分类号 |
H01L27/14 |
代理机构 |
Christie, Parker & Hale, LLP |
代理人 |
Christie, Parker & Hale, LLP |
主权项 |
1. A thin film transistor array panel comprising:
a gate line and a storage electrode on a substrate and separated from each other; a gate insulating layer covering the gate line and the storage electrode; a data line crossing the gate line and being on the gate insulating layer; a thin film transistor at a crossing region of the gate line and the data line, and including a gate electrode, a source electrode, and a drain electrode; a passivation layer exposing a portion of the drain electrode and formed on the thin film transistor and the data line; and a pixel electrode contacting the drain electrode and overlapping the storage electrode with the gate insulating layer interposed therebetween. |
地址 |
Yongin-si KR |