Plasma etching unit

摘要

The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

主权项

1. A plasma etching unit for selectively plasma-etching an organic-material film of a substrate having the organic-material film and an inorganic-material thereon while using the inorganic-material film to function as a mask, said unit comprising:
a chamber configured to contain the substrate to be processed, first and second electrodes oppositely arranged in the chamber, the second electrode being configured to support the substrate to be processed, a process-gas supplying system configured to supply a process gas into the chamber, a gas-discharging system configured to discharge a gas in the chamber, and a first high-frequency electric power source configured to supply a high-frequency electric power of 50 MHz to 150 MHz for forming a plasma to the second electrode, a second high-frequency electric power source configured to apply a second high-frequency electric power of 500 kHz to 27 MHz to the second electrode, the second high-frequency electric power being overlapped with the first high-frequency electric power, and a magnetic-field forming unit configured to form a magnetic field around a plasma region between the first and second electrodes, the magnetic-field forming unit consisting of a magnetic annular unit having a plurality of synchronously and oppositely rotatable segment magnets concentrically arranged around the chamber such that magnetic-pole directions of adjacent segment magnets are opposite, and each segment magnet is vertically bisected into two associated magnets to define an upper set of annularly arranged magnets and a lower set of annularly arranged magnets, and each associated upper magnet and lower magnet are vertically moveable with respect to each other in order to set a vertical gap therebetween.