发明名称 |
METHODS, DEVICES, AND SYSTEMS FOR DEALING WITH THRESHOLD VOLTAGE CHANGE IN MEMORY DEVICES |
摘要 |
The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control circuitry having sense circuitry coupled to the array. The control circuitry is configured to determine changes in threshold voltages (Vts) associated with the memory cells without using a reference cell, and adjust the sense circuitry based on the determined changes and without using a reference cell. |
申请公布号 |
KR20140112576(A) |
申请公布日期 |
2014.09.23 |
申请号 |
KR20147024288 |
申请日期 |
2010.08.18 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SHEN ZHENLEI;RADKE WILLIAM H.;FEELEY PETER |
分类号 |
G11C16/34;G11C16/26;G11C29/42 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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