发明名称 |
Semiconductor device and method of manufacturing same |
摘要 |
In one embodiment, a semiconductor device includes a substrate, a gate insulator on the substrate, and a gate electrode on the gate insulator. The device further includes a source diffusion layer of a first conductivity type and a drain diffusion layer of a second conductivity type disposed on a surface of the substrate so as to sandwich the gate electrode. The device further includes a junction forming region disposed between the source diffusion layer and the drain diffusion layer so as to contact the source diffusion layer. The junction forming region includes a source extension layer of the first conductivity type, a pocket layer of the second conductivity type above the source extension layer, and a diffusion suppressing layer disposed between the source extension layer and the pocket layer and containing carbon so as to suppress diffusion of impurities between the source extension layer and the pocket layer. |
申请公布号 |
US8841191(B2) |
申请公布日期 |
2014.09.23 |
申请号 |
US201313766566 |
申请日期 |
2013.02.13 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Hokazono Akira;Kondo Yoshiyuki;Miyata Toshitaka |
分类号 |
H01L21/336;H01L29/78;H01L29/66;H01L29/08;H01L29/10;H01L29/739 |
主分类号 |
H01L21/336 |
代理机构 |
Knobbe, Martens, Olson & Bear LLP |
代理人 |
Knobbe, Martens, Olson & Bear LLP |
主权项 |
1. A semiconductor device comprising:
a substrate; a gate insulator disposed on the substrate; a gate electrode disposed on the gate insulator; a source diffusion layer of a first conductivity type and a drain diffusion layer of a second conductivity type which are disposed on a surface of the substrate so as to sandwich the gate electrode, the second conductivity type being an opposite conductivity type to the first conductivity type; and a junction forming region disposed between the source diffusion layer and the drain diffusion layer so as to contact the source diffusion layer, and having a surface facing the gate insulator, wherein the junction forming region comprises: a source extension layer of the first conductivity type; a pocket layer of the second conductivity type disposed above the source extension layer; and a carbon containing layer disposed between the source extension layer and the pocket layer, a carbon concentration on the surface of the junction forming region being lower than a carbon concentration in the carbon containing layer. |
地址 |
Tokyo JP |