Process for producing indium oxide-containing layers, indium oxide-containing layers produced by the process and use thereof

摘要

The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR)2 where R=alkyl radical and/or alkoxyalkyl radical and X=F, Cl, Br or I and at least one solvent or dispersion medium is, in the sequence of points a) to d), in anhydrous atmosphere, a) applied to the substrate, b) the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength ≦360 nm and c) optionally dried, and then d) converted thermally to an indium oxide-containing layer, to the layers producible by the process and to the use thereof.

主权项

1. A liquid phase process for producing an indium oxide-comprising layer, the process comprising, in an anhydrous atmosphere:
(a) applying an anhydrous composition comprising an indium halogen alkoxide and a solvent or dispersion medium to a substrate, to obtain an intermediate layer; (b) irradiating the intermediate layer with electromagnetic radiation of wavelength ≦360 nm, to obtain an irradiated layer; (c) optionally drying the irradiated layer; and (d) thermally converting the irradiated layer to an indium oxide-comprising layer, wherein the indium halogen alkoxide in the anhydrous composition has a formula (I):
InX(OR)2  (I),wherein:
R is at least one selected from the group consisting of an alkyl radical and an alkoxyalkyl radical; and X is F, Cl, Br, or I.