Method of manufacturing a light emission device based on light emitting diodes

摘要

A method of manufacturing a device based on LEDs includes the growth of semiconducting nanowires on a first electrode produced on an insulating face, and encapsulation thereof in planarizing material; the formation, on the planarizing material, of a second electrode with contact take-up areas. LEDs are formed by releasing a band of the first electrode around each take-up area, including forming a mask defining the bands on the second electrode, chemically etching the planarizing material, stopped so as to preserve planarizing material, chemically etching the portion of nanowires thus released, and then chemically etching the remaining planarizing material. A trench is formed along each of the bands as far as the insulating face and the LEDs are placed in series by connecting the take-up areas and bands of the first electrode.

主权项

1. A method of manufacturing a light emission device based on light emitting diodes, the method comprising:
forming a support in the form of a heat exchanger, the support having an electrically insulating face; forming a first electrode on the electrically insulating face of the support; growing semiconducting light-emitting nanowires on the first electrode; encapsulating the semiconducting light-emitting nanowires in a planarising material; forming, on the planarising material, a second electrode configured to at least partially transmit the light emitted by the semiconducting light-emitting nanowires; forming, on the second electrode, electrical contact areas for taking up electrical contact; forming the light emitting diodes by:
releasing bands of the first electrode around each electrical contact area, including: forming a mask defining the bands on the surface of the second electrode; conducting a first chemical etching of the planarising material, and then stopping the first chemical etching so as to preserve planarising material on the first electrode; conducting a second chemical etching of a portion of the semiconducting light-emitting nanowires released from the planarising material during the first chemical etching; and then conducting a third chemical etching of the planarising material remaining at the end of the first chemical etching,forming a trench along each of the bands as far as the electrically insulating face of the support; and then placing the light emitting diodes in series by electrically connecting the electrical contact areas and the bands of the first electrode.