发明名称 Vapor deposition method, vapor deposition device and organic EL display device
摘要 A coating film (90) is formed by causing vapor deposition particles (91) discharged from a vapor deposition source opening (61) of a vapor deposition source (60) to pass through a space (82) between a plurality of limiting plates (81) of a limiting plate unit (80) and a mask opening (71) of a vapor deposition mask in this order and adhere to a substrate while the substrate is moved relative to the vapor deposition mask in a state in which the substrate (10) and the vapor deposition mask (70) are spaced apart at a fixed interval. It is determined whether or not it is necessary to correct the position of at least one of the plurality of limiting plates in the X axis direction, and in the case where it is necessary to correct the position, the position of at least one of the plurality of limiting plates in the X axis direction is corrected. Accordingly, a coating film whose edge blur is suppressed can be stably formed at a desired position on a large-sized substrate.
申请公布号 US8841142(B2) 申请公布日期 2014.09.23
申请号 US201113989053 申请日期 2011.12.13
申请人 Sharp Kabushiki Kaisha 发明人 Kawato Shinichi;Inoue Satoshi;Sonoda Tohru
分类号 H01L51/56;H01L51/00;H01L21/66;C23C14/12;C23C14/04;C23C14/24 主分类号 H01L51/56
代理机构 Morrison & Foerster LLP 代理人 Morrison & Foerster LLP
主权项 1. A vapor deposition device for forming a coating film having a predetermined pattern on a substrate, comprising: a vapor deposition unit including a vapor deposition source having a plurality of vapor deposition source openings that are disposed at different positions in a first direction, a vapor deposition mask disposed between the plurality of vapor deposition source openings and the substrate, and a limiting plate unit that includes a plurality of limiting plates disposed along the first direction and that is disposed between the vapor deposition source and the vapor deposition mask; a moving mechanism that moves one of the substrate and the vapor deposition unit relative to the other along a second direction orthogonal to the normal line direction of the substrate and the first direction in a state in which the substrate and the vapor deposition mask are spaced apart at a fixed interval; a limiting plate sensor that measures the position of at least one of the plurality of limiting plates in the first direction; a vapor deposition source sensor that measures the position of at least one of the plurality of vapor deposition source openings in the first direction; and a position adjustment mechanism that corrects the position of at least one of the plurality of limiting plates in the first direction, wherein the limiting plate unit is divided into a plurality of unit parts in the first direction, andthe position adjustment mechanism independently moves each of the plurality of unit parts in the first direction.
地址 Osaka JP