Semiconductor device comprising a capacitor and an electrical connection via, and fabrication method

摘要

A main blind hole is formed in a front face of a wafer having a rear face. A through capacitor is formed in the main blind hole including a conductive outer electrode, a dielectric intermediate layer, and a filling conductive material forming an inner electrode. Cylindrical portions of the outer electrode, the dielectric intermediate layer and the inner electrode have front ends situated in a plane of the front face of the wafer. A secondary rear hole is formed in the rear face of the wafer to reveal a bottom of the outer electrode. A rear electrical connection is made to contact the bottom of the outer electrode through the secondary rear hole. A through hole via filled with a conductive material is provided adjacent the through capacitor. An electrical connection is made on the rear face between the rear electrical connection and the through hole via.

主权项

1. A semiconductor device comprising:
a wafer having a front face and a rear face and in which is formed a main blind hole in its front face; a capacitor formed in the main blind hole which comprises:
a conductive outer layer covering a side wall and a bottom of the main blind hole and forming an outer electrode,a dielectric intermediate layer covering the conductive outer layer and forming a dielectric membrane, anda filling conductive material, at least partially filling the main blind hole and forming an inner electrode; a secondary rear hole formed in the rear face of the wafer, at least partially revealing a bottom surface of the outer electrode; and a rear electrical connection on the rear face of the wafer and in electrical contact with the bottom surface of the outer electrode through the secondary rear hole.