发明名称 |
Method and structure for using discontinuous laser scribe lines |
摘要 |
A thin film photovoltaic device includes a substrate and a first conductive layer coupled to the substrate. The first conductive layer includes at least one first groove extending through a first portion of the first conductive layer to a portion of the substrate. The device also includes at least one semiconductor layer coupled to a remaining portion of the first conductive layer and the portion of the substrate. The at least one semiconductor layer includes a plurality of non-overlapping vias, each via extending through a portion of the at least one semiconductor layer to a portion of the first conductive layer. The device further includes a second conductive layer coupled to a remaining portion of the at least one semiconductor layer and portions of the first conductive layer. The second conductive layer includes at least one second groove extending through a portion of the second conductive layer to a portion of the at least one semiconductor layer. |
申请公布号 |
US8841157(B2) |
申请公布日期 |
2014.09.23 |
申请号 |
US201213343546 |
申请日期 |
2012.01.04 |
申请人 |
Esi-Pyrophotonics Lasers Inc |
发明人 |
Rekow Matthew |
分类号 |
H01L21/00;H01L31/0224;H01L27/142;H01L21/42 |
主分类号 |
H01L21/00 |
代理机构 |
Haynes Beffel & Wolfeld LLP |
代理人 |
Haynes Beffel & Wolfeld LLP |
主权项 |
1. A method of forming a thin film photovoltaic module, the method comprising:
providing a substrate having a first surface and a second surface opposing the first surface, wherein the substrate has a first conductive layer coupled to the first surface; removing a portion of the first conductive layer to expose a portion of the first surface; forming at least one semiconductor layer coupled to remaining portions of the first conductive layer and the portion of the first surface; removing, using laser energy, a first portion of the at least one semiconductor layer to form a plurality of non-overlapping vias extending through the removed first portion of the at least one semiconductor layer to the first conductive layer, using a single laser pulse per via; forming a second conductive layer coupled to a remaining portion of the at least one semiconductor layer and portions of the first conductive layer exposed by the plurality of vias; and removing, using laser energy, a portion of the second conductive layer to expose a second portion of the at least one semiconductor layer. |
地址 |
Quebec CA |