| 摘要 |
PROBLEM TO BE SOLVED: To improve noise resistance of a semiconductor device.SOLUTION: A semiconductor device comprises a plurality of wiring layers WL1, WL2, WL3 in which conductor planes 2PL1, 2PL2, 2PL3 are formed, respectively. In the wiring layer WL3, a through hole land 2TL1 integrally formed with through hole wiring 2TW is formed. In the wiring layers WL1, WL2 formed in an upper layer of the wiring layer WL3 where the through hole land 2TL1 is formed, openings 2Kc1, 2K2b are formed in the 2PL1, 2PL2, respectively. Each opening space of the openings 2K1c, 2K2b is larger than a plane area of the through hole land 2TL1. |
