SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To inhibit increase in contact resistance between a nitride semiconductor layer and an ohmic electrode based on aluminum.SOLUTION: A semiconductor device comprises: an ohmic electrode OE formed on an electron supply layer ES composed of an AlGaN layer; and a wiring layer WL which is formed on the ohmic electrode OE and electrically connected with the ohmic electrode OE. The ohmic electrode OE includes an Al layer 10 whose chief component is aluminum and an AlTi layer 11 of "uniform composition" formed on the Al layer 10. On the other hand, the wiring layer WL includes a Ti layer 12A which is formed on the AlTi layer 11 of "uniform composition" and whose chief component is titanium, a TiN layer 12B formed on the Ti layer 12A and an AlSiCu layer 13 formed on the TiN layer 12B.