| 摘要 |
The present invention relates to a manufacturing method of chalcogenide with a 3-dimensional hierarchical structure. The manufacturing method includes a step of arranging a polymer bead on a substrate which can conduct a galvanic substation with a chalcogen material to form a mask for etching; a step of evaporating a catalyst for etching the substrate onto the substrate on which polymer beads are arranged; a step of forming a pillar by etching the substrate by soaking the substrate into an etching solution with the polymer bead as a mask ; a step of forming a branch protruding from the pillar by generating a galvanic reaction by soaking the substrate with pillar into a solution in which the chalcogen material is dissolved; a step of converting the chalcogen material into chalcogenide by soaking the substrate through a cation substitution reaction. The present invention makes a room temperature process possible, consists of a very simple process which just soaks the substrate into a solution except for technology arranging polymer beads on the substrate, uses spontaneous reactions in the solution, so does not need apparatus for manufacturing 3-dimensional hierarchical structure, is suitable for expanding size, and controls the composition of the solution, therefore manufactures almost the whole chalcogenide. |
