| 摘要 |
Disclosed is an arrangement (1a, 1b) for high power pulsed magnetron sputtering for deposition of a thin film onto a substrate (2) surface. The arrangement (1a, 1b) is provided with a guide (11a, 11 b) provided between the target (3a, 3b) and the substrate (2), providing a magnetic field which guides the plasma towards the substrate (2) surface, wherein all surface normals of an active surface portion of said target (3a, 3b) are directed such that negative ions travelling along such surface normals are prevented from reaching said substrate (2). The arrangement is further provided with means for preventing a substantial portion of negative ions from reaching the substrate (2) surface. Thereby, detrimental effects on the growing film on the substrate (2) surface from negative ions produced in the high power pulsed magnetron sputtering process are reduced. Disclosed is also a method of depositing a thin film onto a substrate (2) surface through high power pulsed magnetron sputtering such that detrimental effects on the growing film from negative ions produced in the method are reduced. |
