| 发明名称 |
Layout Optimization of a Main Pattern and a Cut Pattern |
| 摘要 |
A method for feature pattern modification includes extracting both a main pattern and a cut pattern from a design pattern, the main pattern being laid out under a set of process guidelines that improve the process window during formation of the main pattern, and modifying at least one of: the main pattern and the cut pattern if either feature pattern is in violation of a layout rule. |
| 申请公布号 |
US2014264760(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201314059328 |
申请日期 |
2013.10.21 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chang Shih-Ming;Lu Kuei-Liang |
| 分类号 |
G06F17/50;H01L27/02 |
主分类号 |
G06F17/50 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for pattern modification, the method comprising:
extracting both a main pattern and a cut pattern from a design pattern, the main pattern being laid out under a set of process guidelines that improve the process window during formation of the main pattern; modifying at least one of: the main pattern and the cut pattern if either feature pattern is in violation of a layout rule; and after modifying, combining the main pattern and cut pattern to form a first modified pattern. |
| 地址 |
Hsin-Chu TW |
